Showing posts with label Process Voltage Temperature. Show all posts
Showing posts with label Process Voltage Temperature. Show all posts

March 09, 2013

OCV vs PVT

In the post PVTs and How They Impact Timing, we talked about the confluence of the Process-Voltage and Temperature factors and their impact on timing. I would urge the readers to go through the post in order to grasp the difference between two key terminologies used in the VLSI industry- 

  • OCV: On Chip Variation;
  • PVT: Process, Voltage and Temperature
While PVTs are inter-chip variation which depend largely on external factors like: the ambient temperature; the supply voltage and the process of that particular chip at the time of manufacturing. Like PVTs, OCVs are also variations in process, voltage and temperature. But, hey, where's the difference? OCVs are intra-chip variations! To elucidate more about the OCVs, let's talk in terms of chips!

  • Variation in Process: There are millions of devices (standard cells); and probably billions of transistors packed on the same chip. You can expect every single transistor to have the same process or the channel length! If we say that the chip manufactured exhibits, let's say, worst process, it means that the  channel length tends to deviate towards the higher side. This variation may be more for some transistors and less for some. It can be a ponderous task to quantify this variation between the transistors of the device, and is often modeled as a percentage deviation from the normal.
  • Variation in Voltage: All the standard cells need voltage supply for their operation. And voltage is usually 'tapped' from the voltage rail via interconnects which have a finite resistance. 


In two parts of the chip, it is fairly probable for the interconnect length to be different, resulting in a finite difference in the resistance values and hence the voltage that the standard cells actually receive. As evident above, the voltage received by the standard cells on the right would be less as compared to those on the left.

This variation would be less, probably of the order of a few mili-volts, but is can be significant, is again modeled as OCV.
  • Variation in Temperature: Some parts of the chip can be more densely packed or might exhibit more active switching ss compared to the other parts. In these regions, there is a high probability of the formation of localized 'HOT SPOTS' which would result in increased temperature in some localized areas of the chip. Again, this difference might be order of a few degree centigrade, but can be significant.
All the above mentioned variations are examples of On-Chip-Variations. And usually, these variations are modeled as a fixed percentage of delays. For examples, a 4% OCV derate would mean, that the delays of cells in the data path are inflated by 4% while doing setup analysis and decreased by 4% while doing hold analysis. Same methodology is applied for the clock paths. However, it would be different for launching and capture clock paths. That also gives rise to an interesting topic of Common Path Pessimism Removal which we shall take up shortly. 

June 29, 2012

PVTs and How They Impact Timing

PVT is acronym for Process-Voltage-Temperature.

PVTs model variations in Process, Voltage and Temperature. There's other term OCV which refers to On-Chip Variation. PVTs model inter-chip variations while OCVs model intra-chip variations. 
We'll talk about OCVs in some other post.

Let's talk about PVTs in detail:

1) Process: You must have heard people talking in terms of process values like 90nm, 65nm, 45nm and other technology nodes. These values are characteristic of any technology and represents the length between the Source and Drain of a MOS transistor that you might have studied in your under-grad courses. While manufacturing any die, it has been seen that the dies that are present at the center are pretty accurate in their process values. But the ones lying on the periphery tend to deviate from this process value. The deviation is not big, but can have significant impact on timing.
Recall from your undergrad courses the following formula for current flowing in a MOS transistor:

                                             
L represents the process value. For same temperature and voltage values, current for 45nm process would be more than current for 65nm process.
More is the current, faster is the charging/discharging of capacitors. And this means, delays are less.


2) Voltage: The voltage that any semiconductor chip works upon is given from outside. Recall while working on breadboards in your labs, you used to connect a 5V supply to the Vcc pin of your IC. Modern chips work on very less voltage than that. Typically around 1V-1.2V.
This voltage must be the output of either a DC source or maybe the output of some voltage regulator. The output voltage of voltage regulator might not be a constant over a period of time. Let's say, you expected your voltage regulator to give 1.2V, but after 4 years, it's voltage dropped down to 1.08V or increased up to 1.32V. So, you gotta make sure your chip is working well between 1.08 and 1.32V!!
This is where the need to model Voltage variations come into picture.
From the same equation as above, it can be seen that more is the voltage, more is the current. And hence, delays are less.


3) Temperature: The ambient temperature also impacts the timing. Let's say you are working on a gadget in Siachen glacier where temperature can drop down to -40 degrees centigrade in winters and you expect your device to be working fine. Or maybe you are in Sahara desert, where ambient temperature is +50 degrees and your car engine temperature is +150 degrees and again you expect your chip to working fine. While designing, therefore, STA engineers need to make sure that their chip will function correctly in the temperatures between -40 to +150 degrees.

Higher is the temperature, more is the collision rate of electrons within the device. This increased collision rate forbids other electrons in the periphery to move. Since electron movement is responsible for current flowing in the device, current would decrease with increase in temperature. Therefore, delays are normally more at higher temperatures.


For technology nodes below 65nm, there's a phenomenon called TEMPERATURE INVERSION, where delays tend to increase with decreasing temperature. We shall talk about the same later. Don't get confused with it here.

WORST PVT: Process worst-Voltage min- Temperature-max
BEST PVT:  Process best-Voltage max- Temperature-min
WORST COLD PVT: Process worst-Voltage min-Temperature min
BEST HOT: Process best-Voltage max-Temperature max

STA engineers are responsible for closing the timing ( i.e. setup and hold ) at all these PVT corners.
So, next time you hear an STA engineer cribbing about his timing status across multiple PVTs, please show him some empathy!

Some related topics that we would discuss in upcoming posts:
1) On-Chip Variations and how they differ from PVT.
2) Temperature Inversion.
3) Factors affecting delays of standard cells.

Stay tuned for updates.